KT209B, Bipolar Transistor
-15V, -0.3A, 0.2W, 5MHz, h21e = 40 ... 120 [KT-26 / TO-92]
- Structure: pnp
- Max. e.g. K-b at a given reverse current k and open circuit e. (Ukbo max), V: fifteen
- Max. e.g. K-e at a given current k and open circuit b. (Ukeo max), V: fifteen
- The most admissible current to (Ik max. A): 0.3
- Static current transfer coefficient h21e min: 20 ... 60
- Cutoff frequency of current transfer coefficient fg MHz: 5
- Maximum power dissipation, W: 0.2
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Description
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Nom. number | 9000479007 |
Manufacturer | Integral |
Structure | pnp |
Max. e.g. K-b at a given reverse current k and open circuit e. (Ukbo max), V | fifteen |
Max. e.g. K-e at a given current k and open circuit b. (Ukeo max), V | fifteen |
The most admissible current to (Ik max. A) | 0.3 |
Static current transfer coefficient h21e min | 20 ... 60 |
Cutoff frequency of current transfer coefficient fg MHz | 5 |
Maximum power dissipation, W | 0.2 |
Housingс | CT-26 (TO-92) |
Weight g | 0.3 |
Type Designator: KT209B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
The Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Also Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
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