- Structure: n channel
- Breakdown voltage (V (br) gss), V: 25
- Leakage Current (Idss), mA: 1 … 5
- At Vds, V (Vgs = 0): 15
- Cutoff voltage (Vgs off), V: 6 (max)
- At Id, nA: 10
- Maximum power dissipation, W: 0.31
Transistor, Auto Q101 Ncan 55V 94A [TO-262]
Read all the specification of 2N5457.
|Breakdown voltage (V (br) gss), V||25|
|Leakage Current (Idss), mA||1 … 5|
|At Vds, V (Vgs = 0)||15|
|Cutoff voltage (Vgs off), V||6 (max)|
|At Id, nA||10|
|Maximum power dissipation, W||0.31|
|Operating Temperature (Tj), ° C||-65 … + 150|
|Manufacturer||Central Semiconductor Corp|
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
- N−Channel for Higher Gain
- Drain and Source Interchangeable
- High AC Input Impedance
- High DC Input Resistance
- Low Transfer and Input Capacitance
- Low Cross−Modulation and Intermodulation Distortion
- Plastic Encapsulated Package
- Pb−Free Packages are Available
- N-channel JFET
- TO-92 package
- Voltage rating: 25V
- Often used as a replacement for the J201 JFET
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