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JFET transistor

    • Structure: n channel
    • Breakdown voltage (V (br) gss), V: 25
    • Leakage Current (Idss), mA: 1 … 5
    • At Vds, V (Vgs = 0): 15
    • Cutoff voltage (Vgs off), V: 6 (max)
    • At Id, nA: 10
    • Maximum power dissipation, W: 0.31

Transistor, Auto Q101 Ncan 55V 94A [TO-262]

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Read all the specification of 2N5457.

Nom. number 9000445262
Structure n channel
Breakdown voltage (V (br) gss), V 25
Leakage Current (Idss), mA 1 … 5
At Vds, V (Vgs = 0) 15
Cutoff voltage (Vgs off), V 6 (max)
At Id, nA 10
Maximum power dissipation, W 0.31
Operating Temperature (Tj), ° C -65 … + 150
Housing to-92
Weight g 0.3
Manufacturer Central Semiconductor Corp

N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.


  • N−Channel for Higher Gain
  • Drain and Source Interchangeable
  • High AC Input Impedance
  • High DC Input Resistance
  • Low Transfer and Input Capacitance
  • Low Cross−Modulation and Intermodulation Distortion
  • Plastic Encapsulated Package
  • Pb−Free Packages are Available
  • N-channel JFET
  • TO-92 package
  • Voltage rating: 25V
  • 2N5457
  • Often used as a replacement for the J201 JFET

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