2N5457
JFET transistor
-
- Structure: n channel
- Breakdown voltage (V (br) gss), V: 25
- Leakage Current (Idss), mA: 1 … 5
- At Vds, V (Vgs = 0): 15
- Cutoff voltage (Vgs off), V: 6 (max)
- At Id, nA: 10
- Maximum power dissipation, W: 0.31
Transistor, Auto Q101 Ncan 55V 94A [TO-262]
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Description
Read all the specification of 2N5457.
| Nom. number | 9000445262 |
| Structure | n channel |
| Breakdown voltage (V (br) gss), V | 25 |
| Leakage Current (Idss), mA | 1 … 5 |
| At Vds, V (Vgs = 0) | 15 |
| Cutoff voltage (Vgs off), V | 6 (max) |
| At Id, nA | 10 |
| Maximum power dissipation, W | 0.31 |
| Operating Temperature (Tj), ° C | -65 … + 150 |
| Housing | to-92 |
| Weight g | 0.3 |
| Manufacturer | Central Semiconductor Corp |
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
- N−Channel for Higher Gain
- Drain and Source Interchangeable
- High AC Input Impedance
- High DC Input Resistance
- Low Transfer and Input Capacitance
- Low Cross−Modulation and Intermodulation Distortion
- Plastic Encapsulated Package
- Pb−Free Packages are Available
- N-channel JFET
- TO-92 package
- Voltage rating: 25V
- 2N5457
- Often used as a replacement for the J201 JFET
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