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IGBT Transistor 1200V 25A 312W

    • Technology / Family: npt trench
    • The presence of a built-in diode: Yes
    • Maximum voltage KE, V: 1200
    • Maximum CE current at 25 ° C, A: 50
    • Collector impulse current (Icm), A: 90
    • Saturation voltage at rated current, V: 2.65
    • Maximum power dissipation, W: 312

IGBT Transistor 1200V 25A 312W, Built-in Diode [TO-3PN]

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FGA25N120ANTDTU, Discrete IGBTs, 1000V and over, Fairchild Semiconductor.

Nom. number 9020003351
Technology / Family npt trench
The presence of a built-in diode Yes
Maximum voltage KE, V 1200
Maximum CE current at 25 ° C, A 50
Collector impulse current (Icm), A 90
Saturation voltage at rated current, V 2.65
Maximum power dissipation, W 312
On delay time (td (on)) at 25 ° C, ns 50
Off delay time (td (off)) at 25 ° C, ns 190
Operating Temperature (Tj), ° C -55 … + 150
Housing to-3p
Weight g 6.5
Manufacturer ON Semiconductor

Using ON Semiconductor’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.

  • NPT Trench Technology, Positive temperature coefficient
  • Low saturation voltage: VCE(sat) , typ = 2.0V@ IC = 25A and TC = 25°C
  • Low switching loss: EOFF, typ = 0.96mJ@ IC= 25A and TC= 25°C
  • Extremely enhanced avalanche capability
  • Consumer Appliances

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