IGBT Transistor 1200V 25A 312W
- Technology / Family: npt trench
- The presence of a built-in diode: Yes
- Maximum voltage KE, V: 1200
- Maximum CE current at 25 ° C, A: 50
- Collector impulse current (Icm), A: 90
- Saturation voltage at rated current, V: 2.65
- Maximum power dissipation, W: 312
IGBT Transistor 1200V 25A 312W, Built-in Diode [TO-3PN]
FGA25N120ANTDTU, Discrete IGBTs, 1000V and over, Fairchild Semiconductor.
|Technology / Family||npt trench|
|The presence of a built-in diode||Yes|
|Maximum voltage KE, V||1200|
|Maximum CE current at 25 ° C, A||50|
|Collector impulse current (Icm), A||90|
|Saturation voltage at rated current, V||2.65|
|Maximum power dissipation, W||312|
|On delay time (td (on)) at 25 ° C, ns||50|
|Off delay time (td (off)) at 25 ° C, ns||190|
|Operating Temperature (Tj), ° C||-55 … + 150|
Using ON Semiconductor’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
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