- Technology / Family: trench and fieldstop
- The presence of a built-in diode: Yes
- Maximum voltage KE, V: 1200
- Maximum CE current at 25 ° C, A: 30
- Collector impulse current (Icm), A: 60
- Saturation voltage at rated current, V: 2.4
- Maximum power dissipation, W: 333
Field Stop Trench, IGBT, 1200V, 15A, 333W, (= HGTG5N120BND), [TO-247]
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|Technology / Family||trench and fieldstop|
|The presence of a built-in diode||Yes|
|Maximum voltage KE, V||1200|
|Maximum CE current at 25 ° C, A||30|
|Collector impulse current (Icm), A||60|
|Saturation voltage at rated current, V||2.4|
|Maximum power dissipation, W||333|
|On delay time (td (on)) at 25 ° C, ns||32|
|Off delay time (td (off)) at 25 ° C, ns||490|
|Operating Temperature (Tj), ° C||-55 … + 175|
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
- FS Trench Technology, Positive Temperature Coefficient
- High Speed Switching
- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 15 A
- 100% of the Parts Tested for ILM (Note 1)
- High Input Impedance
- This Device is Pb−Free and is RoHS Compliant
- Solar Inverter, Welder, UPS & PFC Applications
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