J112
Transistor
-
- Structure: n channel
- Breakdown voltage (V (br) gss), V: 25
- Leakage Current (Idss), mA: 1 ... 5
- At Vds, V (Vgs = 0): 15
- Cutoff voltage (Vgs off), V: 6 (max)
- At Id, nA: 10
- Maximum power dissipation, W: 0.31
Transistor, N-channel 35V 50mA [TO-92]
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Description
J112. N-channel JFET, Fairchild Semiconductor.
| Nom. number | 2878504801 |
| Structure | n channel |
| Breakdown voltage (V (br) gss), V | 35 |
| Leakage Current (Idss), mA | 5 (min) |
| At Vds, V (Vgs = 0) | 15 |
| Cutoff voltage (Vgs off), V | 1 ... 5 |
| At Id, nA | 1000 |
| Channel Resistance (RDS (On)), Ohm | 50 (max) |
| Maximum power dissipation, W | 0.625 |
| Operating Temperature (Tj), ° C | -55 ... + 150 |
| Housing | to-92 |
| Weight g | 0.3 |
| Manufacturer | Fairchild Semiconductor |
Features
- This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
- Sourced from Process 51
- Source & Drain are interchangeable
- Source and drain are interchangeable
- Gate to source breakdown voltage of 35V
- Gate to source cut-off voltage of 5V
- Zero gate voltage drain current of 5mA
- Power dissipation (pd) of 350mW
- Operating junction temperature of -55°C to 150°C
- Drain source on resistance of 50 ohm
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