- Structure: n channel
- Breakdown voltage (V (br) gss), V: 25
- Leakage Current (Idss), mA: 1 … 5
- At Vds, V (Vgs = 0): 15
- Cutoff voltage (Vgs off), V: 6 (max)
- At Id, nA: 10
- Maximum power dissipation, W: 0.31
Transistor, N-channel 35V 50mA [TO-92]
J112. N-channel JFET, Fairchild Semiconductor.
|Breakdown voltage (V (br) gss), V||35|
|Leakage Current (Idss), mA||5 (min)|
|At Vds, V (Vgs = 0)||15|
|Cutoff voltage (Vgs off), V||1 … 5|
|At Id, nA||1000|
|Channel Resistance (RDS (On)), Ohm||50 (max)|
|Maximum power dissipation, W||0.625|
|Operating Temperature (Tj), ° C||-55 … + 150|
- This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
- Sourced from Process 51
- Source & Drain are interchangeable
- Source and drain are interchangeable
- Gate to source breakdown voltage of 35V
- Gate to source cut-off voltage of 5V
- Zero gate voltage drain current of 5mA
- Power dissipation (pd) of 350mW
- Operating junction temperature of -55°C to 150°C
- Drain source on resistance of 50 ohm
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