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KT209A, Bipolar transistor

-15V, -0.3A, 0.2W, 5MHz, h21e = 20 ... 60 [KT-26 / TO-92]

  • Structure: pnp
  • Max. e.g. K-b at a given reverse current k and open circuit e. (Ukbo max), V: fifteen
  • Max. e.g. K-e at a given current k and open circuit b. (Ukeo max), V: fifteen
  • The most admissible current to (Ik max. A): 0.3
  • Static current transfer coefficient h21e min: 20 … 60
  • Cutoff frequency of current transfer coefficient fg MHz: 5
  • Maximum power dissipation, W: 0.2

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Description

Get KT209A, Bipolar transistor now in affordable price.

Nom. number 9000479006
Manufacturer Integral
Structure pnp
Max. e.g. K-b at a given reverse current k and open circuit e. (Ukbo max), V fifteen
Max. e.g. K-e at a given current k and open circuit b. (Ukeo max), V fifteen
The most admissible current to (Ik max. A) 0.3
Static current transfer coefficient h21e min 20 … 60
Cutoff frequency of current transfer coefficient fg MHz 5
Maximum power dissipation, W 0.2
Housingс CT-26 (TO-92)
Weight g 0.3

Overview:

Type Designator: KT209A

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

and Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

and Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

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