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RA60H1317M1A

135-175MHz 60W 12.5V

  • Low gain frequency, MHz: 135
  • Top gain frequency, MHz: 175
  • Output power, W: 60
  • Internal power, mW: 100
  • Supply voltage: 12.5
  • Type of modulation: fm
  • Working temperature, C: -30 … 90

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Description

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Nom. number 2211852
Low gain frequency, MHz 135
Top gain frequency, MHz 175
Output power, W 60
Internal power, mW 100
Supply voltage 12.5
Type of modulation fm
Working temperature, C -30 … 90
Weight g 40
Manufacturer Mitsubishi

DESCRIPTION
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 136- to
174-MHz range.

The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

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