135-175MHz 60W 12.5V
- Low gain frequency, MHz: 135
- Top gain frequency, MHz: 175
- Output power, W: 60
- Internal power, mW: 100
- Supply voltage: 12.5
- Type of modulation: fm
- Working temperature, C: -30 … 90
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|Low gain frequency, MHz||135|
|Top gain frequency, MHz||175|
|Output power, W||60|
|Internal power, mW||100|
|Type of modulation||fm|
|Working temperature, C||-30 … 90|
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 136- to
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
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