Optical isolator 3.75kV, 1-channel Gate Driver [DIP-8]
TLP351 (F) Photocoupler, IGBT / MOSFET Gate-Drive, Toshiba.
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
- Peak output current: ±0.6 A (max)
- Guaranteed performance over temperature: −40 to 100°C
- Supply current: 2 mA (max)
- Power supply voltage: 10 to 30 V
- Threshold input current : IF = 5 mA (max)
- Switching time (tpLH/tpHL) : 700 ns (max)
- Common mode transient immunity: 10 kV/μs
- Isolation voltage: 3750 Vrms
- Option(D4) TLP351 (F)
- VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage : 4000VPK
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